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High-Resolution Emission Microscope

HAMAMATSU PHEMOS-X is a high-resolution emission microscope that pinpoints failure locations in semiconductor devices by detecting the weak light emissions and heat emissions caused by semiconductor device defects.

PRODUCT DESCRIPTION

The PHEMOS-X is a high-resolution emission microscope that pinpoints failure locations in semiconductor devices by detecting the weak light emissions and heat emissions caused by semiconductor device defects.

Since the PHEMOS-X is usable in combination with a general-purpose prober, you can do various analysis tasks by using the sample setups you are already familiar with. Installing an optional laser scan system allows acquiring high-resolution pattern images. Different types of detectors are available for various analysis techniques such as emission analysis, thermal analysis, and IR-OBIRCH analysis. The PHEMOS-X supports a wide variety of tasks and applications ranging from prober socket boards to a large-size 300 mm wafer prober.

FEATURES

Two ultra-high sensitivity camera are mountable (Coverage of different detection wavelength ranges for emission analysis and thermal analysis allows easy selection of an analysis technique that matches the sample and failure mode. )

Up to 5 light sources for OBIRCH, DALS, EOP and laser marker are mountable

High accuracy stage designed for advanced devices

Working range of the optical stage
X: ± 20mm	*Working range might be narrower than these values due to the prober being used and interference with the sample stage or mounting of a NanoLens.
Y: ± 20mm
Z: ± 80mm

Working range of the optical stage

X: ± 20mm

*Working range might be narrower than these values due to the prober being used and

interference with the sample stage or mounting of a NanoLens.

Y: ± 20mm

Z: ± 80mm

ADVANTAGES

Rapid defect positioning

Time-saving analysis

Tailored for semiconductor wafer failure analysis applications

Professional-grade electrical positioning equipment for the semiconductor industry

FUNCTION DESCRIPTION

【Functional Features】

Function	Features
OBIRCH	High-resolution, high-contrast reflection pattern images Bottom side observation capable (using 1.3μm wavelength laser) Non-OBIC signal generated in the semiconductor field by Si material since using an infrared laser Possible to measure at four quadrants of voltage/current The OBIRCH amp can work for devices, which need to apply four quadrants of voltage/current. V1 mode, I1 mode, V2 mode, and V3 mode are selectable via software.
EMMI Camera	High sensitivity in the near-infrared region (high quantum efficiency) Powerful tool for analyzing devices with low operating voltage, capable of backside analysis Can be combined with laser microscope, maintaining high resolution and high sensitivity analysis
Current Detection Head	A current detection head can be used to measure devices requiring higher voltages (max. 3kv) or higher currents (max. 6.3A) than the range of standard OBIRCH amp

【Lens Selection】

Up to 5 types of objective lenses can be mounted on the motorized turret
3 types of macro lenses are available. Only one macro lens can be installed on the system

Objective lens

Product Name	Product No.	N.A.	WD (mm)	Analysis
Objective lens 1x for OBIRCH	A7649-01	0.03	20	OBIRCH
Objective lens 2x IR coat	A8009	0.055	34	Emission / OBIRCH
Objective lens NIR 5x	A11315-01	0.14	37.5	Emission / OBIRCH
Objective lens NIR 20x	A11315-03	0.4	20	Emission / OBIRCH
Objective lens PEIR Plan Apo 20x 2000	A11315-21	0.6	10	Emission / OBIRCH
Objective lens PEIR Plan Apo 50x 2000	A11315-22	0.7	10	Emission / OBIRCH
High NA objective lens 50x for IR-OBIRCH	A8018	0.76	12	OBIRCH
Objective lens NIR 100x	A11315-05	0.5	12	Emission / OBIRCH
Objective lens MWIR 0.8x	A10159-02	0.13	22	Thermal emission
Objective lens MWIR 4x	A10159-03	0.52	25	Thermal emission
Objective lens MWIR 8x	A10159-06	0.75	15	Thermal emission

Macro lens

Product Name	Product No.	N.A.	WD (mm)	Analysis
Macro lens 1.35x for PHEMOS-X	A7909-16	0.4	25	Emission / OBIRCH
Macro lens 0.24x for InSb camera	A10159-08	0.08	27	Thermal emission
Macro lens 1x for InSb camera	A10159-10	0.33	52	Thermal emission

PRODUCT SPECIFICATIONS

PHEMOS-X
Dimensions / Weights	Main Unit	1656 mm (W) × 2000 mm (H) × 1247 mm (D) Approx. 1640 kg
	Operation Desk^*1	1000 mm (W) × 700 mm (H) × 800 mm (D) Approx. 39.2 kg
	Operation Desk^*1	1480 mm (W) × 700 mm (H) × 800 mm (D) Approx. 48.6 kg
Line Voltage		Single phase 200 V to 240 V
Power Consumption		Approx. 3300 VA
Vacuum		80 kPa or more
Compressed Air^*2		0.6 MPa to 0.7 MPa

*1: Option

*2: Including a regulator

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High-Resolution Emission Microscope

PRODUCT DESCRIPTION

FEATURES

ADVANTAGES

FUNCTION DESCRIPTION

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