Dynamic H3TRB and DRB Power Semiconductor Test Systems
NI SET Dynamic H3TRB and DRB Power Semiconductor Test System exposes SiC and GaN to dynamic high humidity high temperature reverse bias (H3TRB) or dynamic reverse bias (DRB) tests to reveal the effects from new failure mechanisms.
PRODUCT DESCRIPTION
PRODUCT DESCRIPTION
In a setting with a constant temperature and humidity, the DUT is exposed to dynamic drain stimuli with high voltage peaks with a fast rise of voltage. The voltage shifts lead to fast changes of the magnetic field, which have an impact on corrosion. The procedure accelerates the deterioration of the DUT and possibly also the insulation materials and is the closest to the real-life operational conditions of the DUT.
FEATURES
FEATURES
Accommodates up to 240 DUT channels per system, with Vds and maximum drain voltage up to 1500V
Enables single DUT features including leakage current measurement, overcurrent protection, and voltage control
Supports both DUT-active and DUT-passive testing modes, along with a fully automated test procedure
Offers configurable output frequency from 0Hz to 500kHz and duty cycle settings from 25 percent to 75 percent in five percent increments
Operates under environmental conditions up to 85°C and 85 percent relative humidity, with optional tests like AC-HTC available
ADVANTAGES
ADVANTAGES
Enhanced testing conditions incorporate additional temperature and humidity cycles into the dynamic stress assessment
The flexibility to quickly cover changing requirements
Unique reliability compliance specifically meets the solar industry’s reliability requirements
Optional AC-HTC test variant is tailored for special application scenarios
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