The Angstrom Era of Semiconductor! Spirox and MESOSCOPE Technology Announce the Launch of Angstrom-Level Probes
Professional semiconductor solution provider Spirox Corporation (TWSE: 3055) and the world-leading nanoscale metal probe manufacturer MESOSCOPE Technology jointly announce the official launch of innovative angstrom-level probes. These advanced probes are designed to address challenges in cutting-edge semiconductor processes, delivering comprehensive solutions to the semiconductor measurement field.
With the rapid growth in demand for technologies such as high-speed computing, neural networks, quantum computing, and autonomous driving, the development of chip architecture technology that is low-power, small-sized, heterogeneously integrated, and features ultra-high computational speed has become a crucial industry trend and key success factor for global semiconductor manufacturers. Anticipating the future evolution of semiconductor product architectures, the continuation of Moore's Law is expected, with the transistor density per unit area continuing to grow, and the ongoing miniaturization of dimensions placing higher demands on probes. MESOSCOPE Technology has successfully overcome manufacturing challenges using M.S.T. (Metallic Stress Technology), pushing its products from the nanoscale to the angstrom level. MESOSCOPE Technology has now developed and officially mass-produced probes in up to 14 different sizes, applicable across various fields. From measuring the pads in packaging to characterizing transistor properties, MESOSCOPE Technology’s state-of-the-art CR1 (Curvature Radius 1nm) probes can be applied for fault analysis in processes below 2 nanometers.
Compared to other manufacturing technologies, MESOSCOPE Technology, with M.S.T., can shrink the size of the probe tip to the angstrom level without damaging the material's structural composition. When combined with the world-leading nanoprobing brand Kleindiek Nanotechnik, this technology allows for the widespread application of nanoscale electrical measurements and device characterization in the R&D of various complex, high-speed devices. It ensures quality and reliability while reducing R&D time and manufacturing costs, addressing the growing market demand driven by China's semiconductor localization efforts.
Vincent Huang, Chairman of MESOSCOPE Technology, stated “In the collaboration over the past year, Spirox has demonstrated the rich industry resources and customer relationships accumulated over many years in the semiconductor industry in both Taiwan and China. The highly reliable process and quality assurance solutions Spirox provided, along with the flexible customer service quality, have been well-recognized in the industry. The development of angstrom-level probes in this collaboration represents a significant breakthrough in the global nanoprobing field. MESOSCOPE Technology has been dedicated to bringing cutting-edge probe products to the semiconductor industry, and believed that through the strong collaboration with Spirox, we can continue to provide high-quality solutions for the semiconductor measurement market.”
George Yang, General Manager of Spirox Technology (Shanghai), stated that MESOSCOPE Technology holds a world-class technological advantage in nanoprobes and nanoscale measurements. The introduction of leading-edge angstrom level probes, along with the previous nanoprobing brand Kleindiek Nanotechnik and MESOSCOPE Technology’s nanoprobing measurement services, has further optimized Spirox’s product portfolio. It has enhanced the integrity of Spirox’s process quality assurance solutions. Spirox firmly believes that the collaboration with MESOSCOPE Technology can become a significant driver for breakthroughs and advancements in measurement for semiconductor customers in China. This partnership is expected to meet the stringent technological and measurement requirements of customers for advanced process chips, creating a win-win situation for both parties and customers.
Suitable Technology | Model | Curvature Radius | Width Depth Ratio |
---|---|---|---|
>250nm | CR250 | ≦250nm | 1.1 |
>180nm | CR200 | ≦200nm | 1.3 |
180nm |
CR150 |
≦150nm | 1.7 |
130nm | CR100 | ≦100nm | 2.4 |
90nm | CR50 | ≦50nm |
3.3 |
32nm/28nm | CR35 | ≦35nm |
4 |
20nm/16nm | CR20 | ≦20nm | 4.6 |
16nm/14nm | CR14 | ≦14nm | 4.6 |
14nm/10nm | CR10 | ≦10nm | 5.5 |
10nm/7nm | CR7 | ≦7nm | 5.5 |
7nm/5nm | CR5 |
≦5nm |
6.7 |
<3nm | CR3 | ≦3nm | 6.7 |
<2nm | CR2 | ≦2nm |
8.6 |
<2nm | CR1 | ≦1nm | 8.6 |
<1nm | CR7Å |
≦0.7nm |
12 |
<1nm | CR5Å |
≦0.5nm |
12 |