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FC3000L2 (for Chip on Substrate) | ||
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Machine Type |
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Substrate Size (mm) |
125–250 mm long x 40–95 mm wide (t=0.2–1.0 mm) |
|
Chip size (mm) | Thermo-compression Bonding*1 |
3.0–20 mm long x 3.0–20 mm wide (t=0.05–1.0 mm) |
Ultra-low Pressure Bonding |
3.0–20 mm long x 3.0–20 mm wide (t=0.05–1.0 mm) |
|
Chip Type | Wafer: 1 | |
Chip Orientation*2 | Face up (Wafer 8", 12") | |
Cycle Time*3 | 1.8 sec/chip | |
Alignment Accuracy (3σ)*4 | ±2μm (X,Y) | |
Pressurization Force (N) | High-stiffness Head | 9.8 – 490 |
Ultra-low Pressure Head | 0.098 – 9.8 | |
Bonding Head Type | Ceramic heater head: temperature RT–450℃ |
*注:
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可选择加工大尺寸芯片(最大长 30.0 mm x 宽 30.0 mm)
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可选配处理8"晶圆和承载盘
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周期时间不包括加工时间(即搜寻、键合和真空释放)
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精度测量使用Toray标准衬底进行